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Updated: Jan 13, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Published on: July 18, 2025

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在高K介电氧氧化物和二维二硫化物之间的干净的范德瓦尔斯接口

Han Yan1, Yan Wang1, Yang Li1

  • 1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.

Nature electronics
|October 29, 2025
PubMed
概括

氧化 (ZrO2) 与二氧化 (MoS2) 2D半导体形成一个干净的接口,使先进的场效应晶体管 (FET) 成为可能. 这一突破解决了行业对下一代电子设备的扩展需求.

关键词:
电气和电子工程 电气和电子工程电子设备 电子设备 电子设备

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