退行性添加的间歇性集群的电子和振动特性
K Dhamotharan1, S Wang2,3, S P Hayes1
1Department of Physics, Durham University, Durham DH1 3LE, United Kingdom.
概括
中的间歇性集群显著降低了电气性能. 高分辨率电子能量损失光谱 (EELS) 检测到这些集群,对于理解微型设备至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体设备物理 半导体设备物理
背景情况:
- 退化化呈现间歇性聚合,对载体度和移动性产生负面影响.
- 由于高度,这种聚类问题在微型设备中得到了放大.
研究的目的:
- 用先进的光谱学研究退化的兴奋剂对的振动和电子特性的影响.
- 将实验发现与理论建模相关联,以了解聚类机制.
主要方法:
- 在 (扫描) 传输电子显微镜中利用振动和康普顿电子能量损失光谱 (EELS).
- 采用密度功能理论 (DFT) 建模来模拟网内的相互作用.
主要成果:
- 在1064厘米-1处检测到一个明显的声子缺陷带,并观察到结合异性质的微妙变化.
- DFT建模表明,比起孤立的受体,小型间位集群 (2-3个原子) 更好地解释了实验结果.
- 由于EELS分辨率和康普顿配置分析的局限性,难以准确识别各种集群配置.
结论:
- 间歇集群,而不是孤立的剂,是化中观察到的光谱变化的主要原因.
- 高空间分辨率的EELS在检测与半导体设备性能相关的纳米级集群现象方面显示出前景.
更多相关视频
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
10.2K
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
2.6K
相关概念视频
Semiconductors
1.4K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.4K
Energy Bands in Solids
1.8K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
1.8K
Types of Semiconductors
1.3K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.3K
Valence Bond Theory
11.2K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.2K
Band Theory
17.0K
When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
17.0K
Fermi Level Dynamics
641
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
641
