晶圆尺度偏差/门电压双调制高性能4H-SiC MOSFET紫外线光电探测器
Wanglong Wu1, Shuo Liu1, Liming Huang2
1Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China.
The journal of physical chemistry letters
|October 30, 2025
概括
一种新的晶圆尺度碳化 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 紫外线 (UV) 光探测器提供了高性能. 该设备在紫外线光检测方面实现了出色的响应和检测能力,使大规模生产成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 半导体物理 半导体物理
背景情况:
- 紫外线 (UV) 光的检测对于各种应用至关重要.
- 现有的紫外线光检测器在材料特性和设备性能方面存在局限性.
研究的目的:
- 提出和描述一个晶圆尺度的4H-SiC MOSFET紫外线光探测器.
- 为了证明对优化紫外线检测的双调制能力.
主要方法:
- 一个晶圆尺度的4H-SiC MOSFET紫外线光探测器的制造.
- 在不同偏差和门电压下对设备性能的描述.
- 在紫外线照明下对响应性,检测性和增益的评估.
主要成果:
- 该设备检测到从240到380纳米的紫外线.
- 达到pA级的暗电流,保持nA级在2,100V偏向.
- 在365纳米处展示了偏向/门电压双调制,具有高响应能力 (5.16 × 103 A/W),检测能力 (1.46 × 1013 Jones) 和增益 (1.76 × 104).
结论:
- 拟议的4H-SiC MOSFET紫外线光探测器提供了卓越的性能和双调制.
- 晶圆尺度制造支持智能紫外线光电子系统的重新配置和大规模生产.
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