Byung Cheol Park1,2, Sahng-Kyoon Jerng3, Seung-Hyun Chun3

  • 1Sungkyunkwan University, Suwon, 16418, Republic of Korea.

概括

在拓绝缘体 (TI) 中通过接口的电子流产生了新的热力学相. 这项研究通过控制电子路径来确定激发性TI相,与平衡状态不同.

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Metal-Semiconductor Junctions

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Phase Transitions02:31

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