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新兴的晶体管和磁性存储器适用于恶劣的辐射环境

Daming Zhou^1,2, Xinyu Wang¹, Ke Zhang^1,2

¹Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, People's Republic of China.

Journal of physics. Condensed matter : an Institute of Physics journal

|October 30, 2025

概括

下一代耐辐射电子产品,包括碳纳米管场效应晶体管 (CNTFET) 和磁性存储器,在恶劣环境中提供优越的性能,与相比. 在制造和集成方面仍然存在挑战,但单体3D (M3D) 集成显示出前景.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理
电子工程电子工程

背景情况:

传统的基于的电子产品在辐射环境中降解,限制了航空航天,核电和医学领域的应用.
新兴技术如碳纳米管场效应晶体管 (CNTFET),二维材料FET和磁随机存储器 (MRAM) 提供了潜在的辐射耐受性.

研究的目的:

系统地审查最近在耐辐射晶体管和磁性存储器技术方面的进展.
分析CNTFETs,2D-FETs,STT-MRAM和SOT-MRAM相对于基于的对应器的操作机制,辐射耐受性和可扩展性.
探索单体三维 (M3D) 集成在下一代防辐射系统中的潜力.

主要方法:

关于耐辐射电子设备近期进展的文献综述.
对CNTFETs,2D-FETs,STT-MRAM和SOT-MRAM的操作原理,辐射效应和可扩展性的分析.
评估单立体3D (M3D) 集成作为一个先进的制造范式.

主要成果:

由于其原子结构和粘合,CNTFET和2D-FET具有固有的辐射耐受性.
基于旋转的MRAM (STT-MRAM和SOT-MRAM) 通过磁性介导的数据存储来证明其内在的辐射电阻.
对于这些新兴技术来说,材料沉积,接口优化和制造可扩展性的挑战仍然存在.

结论:

新兴的电子材料和设备显示出对耐辐射应用的重大前景.
单立体3D (M3D) 集成为克服扩展局限性和提高辐射硬化系统中的功能密度提供了一条途径.
在材料科学,设备物理和集成领域的进一步创新对于下一代耐辐射电子的实际实施至关重要.

关键词:

2D-FETs可以使用.在CNTFETs中,我们可以看到.在M3D集成中,M3D集成是非常重要的.这就是SOT-MRAMAM.在STT-MRAM中.耐辐射的辐射耐受性

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