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Updated: Jul 28, 2026

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene
08:25

Chemical Vapor Deposition of an Organic Magnet, Vanadium Tetracyanoethylene

Published on: July 3, 2015

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作为磁性半导体的单层CRI:详细的第一原则研究

F A Núñez-Murillo1, L A López2, D Mejía-Burgos3

  • 1Centro de Investigación en Nanotecnología y Materiales Avanzados CIEN-UC, Facultad de Física, Pontificia Universidad Católica de Chile, Millenium Institute on Green Ammonia as Energy Vector MIGA-ANID, Santiago, Chile. jmejia@puc.cl.

Nanoscale
|October 31, 2025
PubMed
概括

单层二氧化 (CrI2) 具有强大的抗铁磁性和半导体性能. 这些二维材料对先进的自旋电子学和光电子学有很大的前景.

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...