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使用SU-8被动化,首次展示了长期可靠的无歇斯底里 IGZO/SnO 互补电路和 SRAM,使用SU-8被动化

Changwoo Han¹, Hyeonjung Park², Yejoo Choi³

¹School of Electrical Engineering, Korea University, Seoul, 02841, South Korea.

Nano convergence

|October 31, 2025

概括

这项研究展示了使用氧化 (IGZO) 和锡氧化 (SnO) 薄膜晶体管 (TFT) 的低压,无歇斯底里补充电路. 这些氧化物半导体电路为低功耗,可靠的系统集成和未来的AI硬件提供了潜力.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

开发先进的半导体材料对于下一代电子产品至关重要.
氧化物半导体为低功耗应用提供独特的性能.
互补电路需要n型和p型晶体管才能高效运行.

研究的目的:

使用n型氧化 (IGZO) 和p型氧化 (SnO) 薄膜晶体管 (TFT) 演示互补的逻辑和内存电路.
为了实现低电压,无歇斯底里操作,增强稳定性和减少设备变化.
探索这些电路在低功耗系统集成和未来电子应用中的潜力.

主要方法:

制造n型IGZO和p型SNO TFT.
优化IGZO通道厚度以调整逆变器开关点.
应用SU-8被动化来抑制偏差压力诱导的降解.
设备性能的表征,包括电压增益,功耗和稳定性.
一个三阶段环振荡器和6T静态随机存取存储器 (SRAM) 细胞的演示.

主要成果:

实现了低电压,无歇斯底里操作,具有高电压增益 (146.6 V/V) 和超低静电功耗 (纳瓦范围).
在IGZO和SNO TFT中,SU-8被动化有效地提高了长期稳定性,并减少了设备变化.
在3级环振荡器中证明了稳定的振荡,在6T-SRAM单元中显示了可调节的静态噪声边缘.

结论:

IGZO/SnO互补电路可以实现高性能,低功耗的逻辑和内存功能.
展示的设备具有出色的稳定性和可靠性,适合实际应用.
这项工作突出了氧化物半导体互补电路对未来低功耗电子,非易失性存储器和设备内人工智能硬件的巨大潜力.

关键词:

印度氧化 (IGZO) 是一种氧化.逆变器是一个逆变器.有氧化物半导体半导体环振荡器 (RO) 是一个环振荡器.静态的随机访问存储器 (SRAM)薄膜晶体管 (TFT) 是一种薄膜晶体管.锡一氧化物 (SnO) 是一种氧化物.

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