量子电路中的硬化过渡过程
Hyunsoo Ha1, David A Huse1, Grace M Sommers1
1Princeton University, Department of Physics, Princeton, New Jersey 08544, USA.
Physical review letters
|October 31, 2025
概括
我们发现了一种量子电路相位过渡,其中纠动力学像膜一样粗. 这种由混乱引起的粗过渡揭示了量子纠中的新的缩放行为.
科学领域:
- 量子信息科学 量子信息科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 量子电路中的纠动力学可以用随机环境中的膜来建模.
- 膜光滑 (格子固定) 和粗 (电路障碍) 之间存在竞争.
研究的目的:
- 在纠动态中研究由混乱诱导的粗化过渡.
- 在 (3+1) 维的克利福德电路模型中分析纠膜的行为.
主要方法:
- 计算各种二分区的纠.
- 开发倾斜膜的缩放理论.
主要成果:
- 在纠动态中观察到粗化阶段过渡.
- 确定了倾斜膜的新缩放形式.
- 发现了一个关键的"倾斜模式"的交叉.
结论:
- 量子电路障碍驱动着纠中的粗过渡.
- 该研究引入了新的缩放理论,并揭示了新的关键制度.
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