SOT-MRAM

Shreyes Nallan1, Jian-Gang Zhu2

  • 1Data Storage Systems Center, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA. shreyes@cmu.edu.

Scientific reports
|November 1, 2025
PubMed
概括

研究人员通过控制瞬态动态来优化旋转轨道扭矩磁性随机访问存储器 (SOT-MRAM),从而实现较低的电流和更快的速度. 这项工作为有效的概率比特 (p-bit) 铺平了道路,用于概率计算.

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