操纵短暂的SOT-MRAM切换动态以提高效率和概率切换
Shreyes Nallan1, Jian-Gang Zhu2
1Data Storage Systems Center, Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA, 15213, USA. shreyes@cmu.edu.
Scientific reports
|November 1, 2025
概括
研究人员通过控制瞬态动态来优化旋转轨道扭矩磁性随机访问存储器 (SOT-MRAM),从而实现较低的电流和更快的速度. 这项工作为有效的概率比特 (p-bit) 铺平了道路,用于概率计算.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 计算机工程 计算机工程
背景情况:
- 旋转轨道扭矩磁性随机访问存储器 (SOT-MRAM) 是存储器设备的关键技术.
- 了解SOT-MRAM中的切换动态对于性能优化至关重要.
- 切换期间的短暂动态可以导致诸如准随机模式等复杂的行为.
研究的目的:
- 为了研究瞬态动态对SOT-MRAM切换的影响.
- 开发一个关于旋转矩和有效场相互作用的理论框架.
- 确定提高SOT-MRAM效率并实现概率计算的方法.
主要方法:
- 磁化的理论建模写作轨迹.
- 分析扭矩驱动和前置驱动动力学之间的相互作用.
- 模拟和演示设备几何,材料和电气输入的修改.
主要成果:
- 确定了由短暂动态引起的"准静态"模式.
- 证明微小的设备/材料/输入改变可以降低开关障碍.
- 实现了SOT-MRAM切换,电流明显降低,速度更快.
- 展示了随机模式在高温下演变为可调节的概率过渡波段的演变.
结论:
- 过渡动态提供了一条提高SOT-MRAM性能的途径.
- 优化的SOT-MRAM设备可以在降低能耗和提高速度的情况下运行.
- 开发的框架有助于创建用于概率计算的概率位 (p-bit).
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