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推进基于HfO的铁电记忆的前沿:从材料到应用的创新概念

Zuopu Zhou¹, Lingqi Li¹, Yang Feng¹

¹Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.

Advanced materials (Deerfield Beach, Fla.)

|November 3, 2025

概括

基于氧化 (HfO2) 的铁电记忆为以数据为中心的计算提供了卓越的性能. 本综述详细介绍了HfO2材料,设备工程以及下一代内存技术的集成方面的进展.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
电气工程电气工程

背景情况:

传统的铁电材料在扩展和性能方面面临挑战.
数据中心计算需要先进的存储器解决方案.
基于氧化 (HfO2) 的铁电制品是一个有希望的替代品.

研究的目的:

为提供基于HfO2的铁电记忆的最新发展提供了全面的回顾.
识别这个新兴领域的技术机会和挑战.
激发HfO2铁电记忆技术的进一步创新.

主要方法:

材料研究的审查,包括厚度和粒径缩放,极化切换动态和冷行为.
检查设备工程在铁电场效应晶体管 (FeFETs) 和新型设备架构的进展.
对集成策略的分析,如3D堆叠和单立体集成与逻辑晶体管.

主要成果:

在HfO2材料特性和设备性能方面取得了显著的进步.
在缩放,切换动力学和HfO2铁电的冷行为方面取得了进展.
为高密度和高带宽内存应用程序开发先进的集成策略.

结论:

基于HfO2的铁电记忆正在彻底改变记忆技术.
需要进一步的研究来解决剩余的挑战,并释放充分的潜力.
这些材料提供了令人兴奋的机会,超出了传统的数据存储.

关键词:

基于HfO2的铁电制品铁电场效应晶体管铁电场效应晶体管铁电材料是铁电材料.铁电记忆铁电记忆在内存计算中的计算.一个单一的整合.

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