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Updated: Jan 12, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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在平坦而刚硬的SiO基板上压力单层MoS2晶体管

Jinghui Gao1, Yunxin Li1, Kaixin Niu1

  • 1Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.

Nano letters
|November 4, 2025
PubMed
概括

研究人员开发了一种用于二维 (2D) 晶体管的新型应变工程方法,可以在标准基板上提高性能. 这种技术显著提高了MoS2晶体管的载体移动性,而不需要复杂的制造,为实际的二维电子铺平了道路.

关键词:
两维材料是二维材料.平面基板是一个平面基板.增强移动性的增强移动性应变工程是一种应变工程.转移诱导的诱导转移

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