侧面交换偏差用于原子薄反铁磁体中的尼尔向量控制
Clément Pellet-Mary1, Debarghya Dutta2, Märta A Tschudin2
1Department of Physics, University of Basel, Basel, Switzerland. clement.pellet-mary@unibas.ch.
Nature communications
|November 4, 2025
概括
研究人员使用横向交换偏差控制了抗铁磁 (AF) 范德瓦尔斯 (vdW) 磁铁中的尼尔向量. 这一突破使先进的自旋电子学能够在原子薄的AF中对磁域进行非挥发性操纵.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 反铁磁 (AF) 范德瓦尔斯 (vdW) 磁铁为超高速和强大的自旋电子设备提供了潜力.
- 一个关键的局限性是缺乏确定性方法来控制它们的顺序参数,尼尔向量.
研究的目的:
- 为了实现vdW AF二层中的Neel向量的局部和决定性控制.
- 建立一个纳米级操纵工具包,用于原子薄的AF.
主要方法:
- 在CrSBr vdW AF二层中使用横向交换偏差 (LEB).
- 在梯级crsbr样本中利用单晶注册表.
- 通过将磁场应用于相邻的奇异层状片来操纵Neel向量.
主要成果:
- 通过LEB在CrSBr双层中证明了Neel向量控制.
- 实现了磁域和磁域壁的非挥发性操纵.
- 建立了一个纳米级控制机制,以 AF 顺序.
结论:
- 侧面交换偏差为AF顺序的原子级控制提供了一个新的机制.
- 这项工作挑战了对交换偏差的传统理解.
- 为使用VDW磁铁的先进的自旋电子架构和量子技术铺平了道路.
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