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Updated: Jan 12, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

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无兴奋剂的单立体二维CMOS逻辑由费米级工程通过缓冲层.

Hao Liu1,2, Lingan Kong1, Xiaolong Meng1,2

  • 1Songshan Lake Materials Laboratory, Dongguan, 523808, China.

Small (Weinheim an der Bergstrasse, Germany)
|November 7, 2025
PubMed
概括

这项研究引入了一种新的无兴奋剂CMOS制造方法,使用缓冲层来实现2D半导体的极性控制. 这一突破为下一代电子产品提供了高效的互补逻辑电路.

关键词:
两维半导体是二维的半导体没有兴奋剂的CMOS逆变器.接口工程 接口工程 接口工程极性控制控制的极性控制的缓冲层是的缓冲层.

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