在反铁磁绝缘体中弹道特拉赫兹磁电流的标志
Hongsong Qiu1,2,3, Oliver Franke2, Yuanzhe Tian3
1Nanjing University, State Key Laboratory of Spintronics Devices and Technologies, School of Integrated Circuits, Suzhou 215163, People's Republic of China.
Physical review letters
|November 7, 2025
概括
像NiO这样的抗铁磁绝缘体可以通过太赫兹磁子传输超快的自旋电流. 这些自旋电流在弹道上以高达40纳米/秒的速度传播,显示了自旋电子设备的潜力.
科学领域:
- 物理 物理学 物理
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 高效的旋转角动量传输是特拉赫兹旋转器件的关键.
- 抗铁磁绝缘体提供了使用太赫兹磁子的超快纯自旋电流的潜力.
研究的目的:
- 为了研究反铁磁绝缘体中的超快旋转电流传输.
- 在NiO薄膜中特征特拉赫兹磁运输.
主要方法:
- 使用 femt秒激光脉冲触发PyRacNiO和PyRacPt堆中的自旋电流.
- 采用全光学,无接触的自旋导电方法.
- 在不同厚度的NiO中测量了自旋电流速度和衰减.
主要成果:
- 观察到旋转电流脉冲穿过NiO,速度高达40nm/s.
- 发现与较厚的NiO薄膜增加衰减,延迟和扩展.
- 通过弹道运输不连贯的磁子来解释结果.
- 确定了20纳米的马格农放松长度,比金属大得多.
结论:
- 反铁磁绝缘体通过磁子促进了高效的超快旋转传输.
- 观察到的马格农运输特性对于未来的自旋电子应用有意义.
- 开发的方法可以描述各种磁绝缘体中的太赫兹磁传输.
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