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Updated: Jan 12, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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一种配方剂的两步粒界扩散机制,伴随着结构转换

Chuchu Yang1,2, Bin Feng3,4, Toshihiro Futazuka1

  • 1Institute of Engineering Innovation, School of Engineering, The University of Tokyo, Bunkyo, Tokyo, Japan.

Nature communications
|November 7, 2025
PubMed
概括

多晶材料中的多扩散会导致粒度边界 (GBs) 的结构变化. 这种转变显著改变了的扩散速率,为材料特性提供了新的见解.

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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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