在高N2压力下从Ni和Ni-Cr溶液中hBN的晶体生长
Bohdan Sadovyi1,2, Petro Sadovyi1, Andrii Nikolenko3
1Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland.
ACS applied materials & interfaces
|November 9, 2025
概括
高质量的六角化 (hBN) 晶体是在高压下生长的. 这些hBN晶体使得具有特殊电子和孔移动性的石墨烯晶体管成为可能,证明了它们对先进电子应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 六角化 (hBN) 是一种具有优异电子应用性能的二维材料.
- 以前用于生长高质量的hBN晶体的方法有局限性.
研究的目的:
- 开发一种培养高质量,厚厚的六角化 (hBN) 晶体的方法.
- 为了评估这些hBN晶体在基于石墨烯的电子设备中的性能.
主要方法:
- 在高气压下 (1000-1500 bar) 从Ni-Cr和纯Ni金属溶液中hBN的结晶生长.
- 使用微拉曼映射和光学吸收测量进行表征.
- 用脱皮的hBN片封装的石墨烯晶体管的制造和测试.
主要成果:
- 获得了具有高结构质量的透明,无色hBN晶体.
- 与大气压方法相比,生长了明显更厚的hBN晶体 (高达30微米).
- 封装在hBN中的石墨烯晶体管表现出高载体流动性 (>21.2 m2/V·s对于230 K的电子和孔).
结论:
- 高压合成对于生长高质量,厚厚的hBN晶体是有效的.
- 合成的hBN晶体显著提高了基于石墨烯的设备的性能.
- 该研究强调了高压培养的hBN在下一代电子产品中的潜力.
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