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皮纳科尔博兰作为一个减少剂在铜和石的原子层沉积中的降解剂
Anton Vihervaara1, Timo Hatanpää1, Kenichiro Mizohata2
1Department of Chemistry, University of Helsinki, P.O. Box 55, Helsinki FI-00014, Finland.
ACS omega
|November 10, 2025
概括
研究人员开发了一种新的原子层沉积 (ALD) 工艺,用于铜和石薄膜. 这种方法使用pinakolborane (HBpin) 作为还原剂,使选择性铜沉积具有低电阻.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 化学工程是化学工程的重要组成部分.
背景情况:
- 原子层沉积 (ALD) 对于薄膜制造至关重要.
- 开发新的ALD工艺,用于铜和石等金属是一个活跃的研究领域.
- 现有的铜和珠的ALD方法可能在前体化学或选择性方面存在局限性.
研究的目的:
- 开发一种新的原子层沉积 (ALD) 工艺,用于铜和木金属薄膜.
- 调查皮纳科尔博兰 (HBpin) 作为金属氧化物前体的降解剂的使用.
- 描述开发的铜ALD工艺的特性和选择性.
主要方法:
- 开发了一种新的ALD工艺,使用bis-(1-dimethylamino-2-propoxy) -copper-(II) (Cu-(dmap) 2) 和tris-(2,3-dimethyl-2-butoxy) -bismuth-(III) (Bi-(OCMe2iPr) 3) 前体.
- 采用皮纳科尔博兰 (HBpin) 作为减少剂.
- 对铜ALD工艺进行了全面的研究,对不同沉积温度 (65-130°C) 和薄膜特性进行了描述.
主要成果:
- 成功开发了铜和斯木的ALD工艺.
- 确认了65-130°C之间的铜沉积的自我限制反应.
- 在80°C的温度下达到0.25 Å/周期的铜增长率,电阻为4 μΩ cm.
- 观察到铜生长的意想不到的固有选择性,在Pt和Co表面的沉积量微不足道.
结论:
- 使用HBpin的新ALD工艺对于沉积铜和珠薄膜是有效的.
- 开发的铜ALD工艺表现出极好的性能,包括低电阻和固有的表面选择性.
- 这项工作为选择性金属ALD提供了一个有前途的新途径,有利于各种微电子应用.
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