在Cu2SnS3中实现应变诱导的多重拓阶段:一个ab-initio研究
Prakash Pandey1, Sudhir K Pandey2
1School of Physical Sciences, Indian Institute of Technology Mandi, Kamand 175075, India.
Journal of physics. Condensed matter : an Institute of Physics journal
|November 10, 2025
概括
研究人员使用单轴压缩应变在Cu2SnS3中发现了多个拓相和过渡. 这种材料显示了在应力下独特的拓相变,为拓材料研究提供了新的可能性.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子材料是一种量子材料.
背景情况:
- 探索多个拓阶段 (TP) 及其过渡对于新型材料设计至关重要.
- 使用一个参数在单一材料中实现多个TP和过渡仍然是一个重大挑战.
研究的目的:
- 在单轴压缩应变 (UCS) 下,证明多重拓相和转换在正方体Cu2SnS3中.
- 研究旋转轨道合 (SOC) 和应变对Cu2SnS3.3的拓性质的影响.
主要方法:
- 使用了最先进的 ab initio 计算.
- 分析了带有和没有自旋轨道合 (SOC) 的拓性质.
- 研究了不同单轴压缩应变 (UCS) 的影响.
主要成果:
- Cu2SnS3表现出没有SOC的II型节点环和具有七个Weyl点和具有SOC的节点弧的Weyl相.
- UCS诱导从II型转向III型结节环的过渡 (5.5% <= UCS <5.6%).
- 有四个韦尔节点的韦尔阶段在5.6%的UCS中出现,即使没有SOC,但节点弧仍然存在.
结论:
- 正交 Cu2SnS3 承载着由单轴压缩应变驱动的多个拓阶段和过渡.
- 应变诱导的拓平面带有助于观察到没有SOC的TP.
- 这项工作为设计单一材料中的多重拓相变提供了一条途径.
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