在V-4Cr-4Ti中的诱导的缺陷聚类和热演变:用于核聚变反应堆应用的合金
Renjith Ramachandran1,2, S U Nebula3,4, C David3,4
1Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam, Tamil Nadu, 603 102, India. renjitrm@igcar.gov.in.
Scientific reports
|November 10, 2025
概括
在V-4Cr-4Ti聚变材料中形成的空团在873 K. 这些团生长到1273 K,然后分离,提供了对聚变反应堆结构完整性的见解.
科学领域:
- 材料科学 材料科学 材料科学
- 核工程 核工程是指核工程.
- 计算物理 计算物理
背景情况:
- V-4Cr-4Ti合金是聚变反应堆结构材料的主要候选材料.
- 了解空位 (HemVn) 集群在辐射下的行为对于反应堆的寿命至关重要.
- 之前的研究缺乏在回火过程中详细的深度解析缺陷分析.
研究的目的:
- 为了研究在V-4Cr-4Ti合金中HemVn集群在辐射下形成和演变.
- 为了确定回火对集群特征和缺陷结构的影响.
- 为了将HemVn集群行为与RAFM钢等其他聚变材料进行比较.
主要方法:
- 用130 keV He+离子对V-4Cr-4Ti进行辐射,达到1x1017离子/cm2.
- 同时化与基于可变低能正子束的多普勒扩展光谱学相结合.
- 密度函数理论 (DFT) 对He和空位相互作用的计算.
主要成果:
- 富含空隙的HemVn集群在表面附近形成,材料中更深处的富含的集群.
- 热/电比随着回火增加到773K,增加到773K.
- 较大的HemVn集群通过热空位从773 K增长到1273 K,然后通过在1373 K的发射空位分离.
结论:
- 在V-4Cr-4Ti中,HemVn集群的形成始于873K,大约比RAFM钢高100K.
- 在V-4Cr-4Ti中的HemVn集群的化行为表明了核聚变反应堆应用的潜在优势.
- 与DFT相结合的正电子消灭光谱学为表征辐射缺陷提供了强大的工具.
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