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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

535
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
535
Transmission Line Design Considerations01:23

Transmission Line Design Considerations

584
Aluminum has become the material of choice for overhead transmission lines, surpassing copper due to its abundance and cost-effectiveness. The most prevalent type is the aluminum conductor, steel-reinforced (ACSR), which combines aluminum strands around a steel core. Other variants include all-aluminum conductors (AAC), all-aluminum alloy conductors (AAAC), aluminum conductor alloy-reinforced (ACAR), and aluminum-clad steel conductors. Advanced designs, such as aluminum conductors with steel...
584
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.8K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

882
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
882
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

759
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
759
Semiconductors01:22

Semiconductors

1.4K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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相关实验视频

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

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紧型和低交叉的基于的极化不敏感的多通道和多模式波导交叉.

Jiafeng Ni, Yun Chen, Pengjun Wang

    Optics express
    |November 11, 2025
    PubMed
    概括

    本研究介绍了一种紧型波导交叉,适用于所有光极化和光模式. 它实现了低信号损失和交叉通话,使其成为集成光子学的理想选择.

    科学领域:

    • 光子学和光学工程的工程.
    • 集成光学 集成光学 集成光学
    • 纳米光子学 纳米光子学

    背景情况:

    • 波导交叉是光子集成电路中必不可少的组件.
    • 在紧的波导交叉路口中实现极化不敏感和多模式运行仍然是一个挑战.

    研究的目的:

    • 设计,优化和实验验证一个极化不敏感的多通道和多模式波导交叉.
    • 为了实现紧的足迹,低交叉声,低插入损失和宽带宽.

    主要方法:

    • 利用粒子群集优化和直接二进制搜索算法来优化设备.
    • 使用有限差异时间域 (FDTD) 方法进行模拟和分析.
    • 制造的基于的设备的实验验证.

    主要成果:

    • 波导交叉显示了一个紧的尺寸13.6μm × 13.6μm.
    • 在TE0,TM0,TE1和TM1模式下,实现了低于-20.4dB的交叉声和低于1.80dB的插入损失.
    • 在波长范围为1520至1600纳米的波长范围内表现出性能.

    结论:

    • 开发的波导穿越有效地解决了极化和模式依赖.

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  • 该设备提供了优秀的性能指标,适用于先进的集成光子应用.
  • 这项工作有助于开发更高效和多功能光子集成电路.