附加方法的实验性表征和分析反向设计紧边缘合器解决方案
Optics express
|November 11, 2025
概括
我们开发了一种紧的化边缘合器,用于1550nm波长的反向设计. 这种光子集成电路组件实现了低合损失,并实现了更高的集成密度.
科学领域:
- 光子学是指光子学的使用方法.
- 集成光学 集成光学 集成光学
- 材料科学 材料科学 材料科学
背景情况:
- 边缘合器对于将光纤与光子集成电路接口至关重要.
- 传统的边缘合器设计往往需要一个大的足迹,限制设备密度.
- 化是光子集成电路的一个有前途的材料,因为它的低损耗和CMOS兼容性.
研究的目的:
- 使用反向设计设计设计和制造一个紧的化边缘合器.
- 通过实验来描述合性能和损耗.
- 分析纤维对齐和制造变化对性能的影响.
主要方法:
- 使用开源逆向设计框架进行组件优化.
- 使用标准的300毫米造工厂光刻工艺制造了边缘合器.
- 测量了1550 nm的准TE和准TM模式的光纤到芯片合损失.
主要成果:
- 实现了12 x 4μm的紧边缘合器足迹.
- 测量合损失为5.5dB的准-TE模式和2.4dB的准-TM模式.
- 对纤维对齐和制造公差的敏感性进行了研究.
结论:
- 相反的设计使得相比于亚亚巴特缩的边缘合器,边缘合器要短得多.
- 这种紧的设计提高了光子集成电路中的集成密度.
- 证明的方法对于高性能光子设备制造是可行的.
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