在宽带化平台上使用基于的相变器进行稳定的非挥发性相调
Optics express
|November 11, 2025
概括
研究人员开发了一种新的非挥发性光子开关,使用化 (Sb2Se3) 化 (SiNx). 这种相变材料方法为光子集成电路提供了低损耗,可扩展的宽带切换.
科学领域:
- 材料科学 材料科学 材料科学
- 光子学是指光子学中的一个方面.
- 电气工程 电气工程
背景情况:
- 光子学对于可扩展的低功耗光子集成电路 (PIC) 是至关重要的.
- 在化平台上的传统调制器面临着高功耗和波动性挑战.
- 换相材料 (PCM) 提供非挥发性,低损耗的切换,具有高折射率对比度 (Δn).
研究的目的:
- 为了证明一个n-doped多微加热器的集成,以诱导二化 (Sb2Se3) 中的相变.
- 为基于化的光子集成电路在C频段中开发一种非挥发性切换机制.
主要方法:
- 在化 (SiNx) 平台上制造一个设备,集成一个用化 (Sb2Se3) 和化 (Sb2Se3) 进行n-doped多微加热器.
- 使用受控的电脉冲来诱导Sb2Se3.3.中的可逆相变 (无形到晶体).
- 设备性能的表征,包括相位移,灭绝比和C频段的循环稳定性.
主要成果:
- 通过将Sb2Se3在无形状态和晶体状态之间切换,实现了0.43π的相位移.
- 经过7900个周期的非挥发性切换,其灭绝率高达12.5dB.
- 在7900个周期中观察到灭绝比率的最小变化 (±1.9dB).
结论:
- 集成的多微加热器有效地诱导Sb2Se3中的非挥发性相变,用于光子切换.
- 展示的设备显示出高稳定性和性能,适用于宽带光子切换应用.
- 这种方法对可扩展,低功耗,非挥发性光子集成电路具有重大潜力.
相关概念视频
MOSFET: Enhancement Mode
759
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
759
Biasing of Metal-Semiconductor Junctions
535
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
535


