Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

1.8K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.8K
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

1.5K
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
1.5K
Biasing of FET01:22

Biasing of FET

660
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
660
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

535
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
535
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.9K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.9K
Induced Electric Dipoles01:28

Induced Electric Dipoles

4.7K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.7K

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Sub-femtosecond figure-of-merit millimeter-wave switches via solution-processed MoS<sub>2</sub> for 6G radio-frequency front-ends.

Nature communications·2026
Same author

Integrated catalyst-transport nickel-iron porous electrode for anion exchange membrane water electrolysis.

Nature communications·2026
Same author

On-Chip Direct Synthesis of 2D Semimetals for van der Waals Metal-Semiconductor Junction Transistor Arrays.

ACS nano·2026
Same author

Advances and Future Challenges in Monolithic 3D Integrated Logic, Power, and Optoelectronics Technologies for Tightly Interconnected Intelligent Systems.

ACS nano·2026
Same author

Protective Surface Amorphization Enabling Electrocatalytic Pt Alloy Synthesis.

ACS nano·2026
Same author

Revisiting Dynamical Theory To Elucidate Friedel's Law Breaking in Low-Energy Electron Diffraction as Strong Evidence of Unidirectional Growth of Monolayer 2H MoS<sub>2</sub>.

Nano letters·2026
Same journal

Synergistic Buried Interface Engineering via Ion Exchange and Passivation for High-Performance Inverted Perovskite Solar Cells.

ACS applied materials & interfaces·2026
Same journal

In Situ Wet Coating of Ammonium Phosphomolybdate for Enhancing the Kinetics and Cycling Stability of NaNi<sub>1/3</sub>Fe<sub>1/3</sub>Mn<sub>1/3</sub>O<sub>2</sub> Cathode Material.

ACS applied materials & interfaces·2026
Same journal

Molecular Hybrids of Serum Albumin and Cobalt Phthalocyanine for Asymmetric Oxidation of C=C and C-H Bonds.

ACS applied materials & interfaces·2026
Same journal

A High-Throughput Platform for Measuring and Predicting Vitrification Behavior in Multicomponent Aqueous Solutions.

ACS applied materials & interfaces·2026
Same journal

A Brain-Targeted DNA Delivery Nanocarrier Modulator for Synergistic Therapy of Parkinson's Disease.

ACS applied materials & interfaces·2026
Same journal

Quasi-Discrete Channels of Porous Coordination Polymers for Selective Multiscenario CO<sub>2</sub> Recognition.

ACS applied materials & interfaces·2026
查看所有相关文章

相关实验视频

Updated: Jan 11, 2026

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
08:06

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Published on: February 23, 2017

8.9K

极性工程在一个单一的MoTe2 设备为同质的互补电路应用.

Hyeonchang Son1, Seungbin Lee1, Seungchan Lee2

  • 1Department of Electrical Engineering and Computer Science (EECS), Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea.

ACS applied materials & interfaces
|November 11, 2025
PubMed
概括
此摘要是机器生成的。

这项研究引入了一种新的方法,用于精确控制2D材料的电特性,例如二甲化物 (MoTe2). 这一突破使得能够创建具有增强性能和多功能性的先进电子设备.

关键词:
逻辑门电路的逻辑门的电路.二甲二甲化物是什么极性工程是指极性的工程.可重新配置的电路应用程序.纠正电路的纠正电路是什么

更多相关视频

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

8.9K
Fabrication Procedures and Birefringence Measurements for Designing Magnetically Responsive Lanthanide Ion Chelating Phospholipid Assemblies
09:38

Fabrication Procedures and Birefringence Measurements for Designing Magnetically Responsive Lanthanide Ion Chelating Phospholipid Assemblies

Published on: January 3, 2018

7.5K

相关实验视频

Last Updated: Jan 11, 2026

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone
08:06

Merging Ion Concentration Polarization between Juxtaposed Ion Exchange Membranes to Block the Propagation of the Polarization Zone

Published on: February 23, 2017

8.9K
A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

8.9K
Fabrication Procedures and Birefringence Measurements for Designing Magnetically Responsive Lanthanide Ion Chelating Phospholipid Assemblies
09:38

Fabrication Procedures and Birefringence Measurements for Designing Magnetically Responsive Lanthanide Ion Chelating Phospholipid Assemblies

Published on: January 3, 2018

7.5K

科学领域:

  • 材料科学 材料科学 材料科学
  • 凝聚物质物理学 凝聚物质物理学
  • 纳米技术纳米技术

背景情况:

  • 二维 (2D) 材料由于其原子薄度而具有独特的电子特性.
  • 在单一二维材料中精确控制n型和p型导电性对于互补电路至关重要,但仍然具有挑战性.

研究的目的:

  • 为二甲 (MoTe2) 开发一种多功能极性工程策略.
  • 为了证明在单一的MoTe2片上制造n型和p型场效应晶体管 (FET).
  • 探索集成互补电路和可逆极性切换的潜力.

主要方法:

  • 使用聚甲基酸 (PMMA) 辅助分子吸附用于MoTe2.2的p型兴奋剂.
  • 使用聚焦电子束照射用于MoTe2.2的n型兴奋剂.
  • 在单片片上制造和表征MoTe2 p-FET和n-FET.

主要成果:

  • 实现了高的开启电流 (>2μA在1V),低的下值波动 (<451.3 mV/dec),以及高的开启/关闭比率 (>10^4) 对于两个极性.
  • 证明了功能补充电路,包括逆变器 (增益~48),NAND/NOR门和全波整流器.
  • 通过受控的兴奋剂在单个MoTe2设备中展示了可逆极性转换.

结论:

  • 开发的极性工程策略对于创建基于MoTe2的高性能电子设备是有效的.
  • 这种方法可以使二维材料融入复杂的互补电路.
  • 可逆切换极性的能力为可重新配置和多功能2D半导体设备开辟了新的途径.