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Updated: Jan 11, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

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在MBE培养的2D 2H-MoSe2/2H-MoTe2异构结构中介于交界电荷转移的费米水平固定

Kamlesh Bhatt1, Santanu Kandar1, Lipika1

  • 1Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India. rsingh@physics.iitd.ac.in.

Nanoscale horizons
|November 11, 2025
PubMed
概括

我们为光电子工程设计了MoSe2/MoTe2异构结构. 接口 Te 迁移和粘合改变了带对齐,使得场效应晶体管 (FET) 中的载波传输能够得到改进.

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