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在4H-SiC中通过拉曼光谱学诱导的离子辐射引起的损伤和电力特征的非破坏性评估

Hui Dai¹, Zhiyan Hou¹, Xinqing Han²

¹Key Laboratory of Particle Physics and Particle Irradiation (MOE), Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China.

Materials (Basel, Switzerland)

|November 13, 2025

概括

对碳化 (SiC) 的受控辐射会损坏其晶格,降低电导率. 拉曼光谱测量了这种障碍,使得对恶劣环境的优化设计成为可能.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
半导体设备工程半导体设备工程

背景情况:

碳化 (SiC) 对于太空和核应用中的设备至关重要.
了解辐射引起的损伤对于SiC设备的可靠性和寿命至关重要.
网格损坏会对半导体的电气性能产生重大影响.

研究的目的:

调查和量化晶格损坏对SiC电气性能的影响.
为了确定材料混乱和电导率降低之间的相关性.
开发一个预测框架,用于SiC设备在辐射下的性能.

主要方法:

对SiC样品进行受控辐射,以诱导不同程度的晶格损伤.
拉曼光谱分析损伤演变和障碍.
霍尔效应测量以评估载体度和移动性.
电导测试用于量化性能降低.

主要成果:

拉曼光谱揭示了一个明显的趋势,即随着辐射流动性增加的障碍.
辐射引起的缺陷导致载体度和移动性的显著减少.
电导率降低了数量级,在数量上与混乱相关.
DI/DS模型有效量化了总体障碍.

结论:

拉曼光谱提供了一种非破坏性的方法来评估SiC材料损伤,并预测电气降解.
确立了辐射诱导障碍和电导率损失之间的定量相关性.
这项工作为设计用于极端环境的辐射硬化SiC设备提供了预测框架.

关键词:

4H-SiC 4H-SiC 是一个拉曼光谱法拉曼光谱法拉曼光谱法导电性降解降解导电性的降解.离子辐射辐射的离子辐射.辐射损伤辐射损伤

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