Hf0.5Zr0.5O2

Ji Soo Kim1, Benedetta Gaggio1, Babak Bakhit1

  • 1Department of Materials Science & Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, United Kingdom.

概括

具有超薄底层的Sm-doped hafnium氧化物 (HZO) 显著降低了强迫场,并提高了铁电记忆器件的耐力. 这种方法增强了HZO的功能.