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绿色μ-LED使用AlON缓冲层的光电子性能和调制带宽

Longteng Wang, Yurong Dai, Shuhui Wang

|November 14, 2025

概括

这项研究引入了氧化 (AlON) 缓冲层,以提高绿色微型LED的性能. AlON层提高了晶体质量和效率,从而为先进的显示器和通信提供更快的调制速度.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

绿色微型发光二极管 (μ-LED) 对于下一代显示器和可见光通信至关重要.
传统的化 (AlN) 缓冲层在优化μ-LED性能方面存在局限性.
内部压力和量子局限的斯特克效应 (QCSE) 阻碍了设备的效率和速度.

研究的目的:

为了研究氧化 (AlON) 缓冲层在增强绿色μ-LEDs中的有效性.
为了比较AlON缓冲层与传统AlN缓冲层的性能.
评估AlON对晶体质量,内部应力和光电子特性的影响.

主要方法:

使用AlON缓冲层制造绿色μ-LED.
与使用AlN缓冲层的μ-LED进行比较分析.
对GaN晶体质量,内部应力和光电子性能指标的表征.

主要成果:

与AlN相比,AlON缓冲层显著提高了化 (GaN) 晶体质量.
减少内部压力和抑制量子局限的斯塔克效应 (QCSE) 被观察到与AlON.
实现了调制带宽的21.75%提升和峰值外部量子效率的9.86%提升.

结论:

AlON缓冲层为高性能绿色μ-LED提供了优越的AlN替代方案.
增强的光电子特性使AlON成为先进显示和通信技术的关键材料.
对AlON缓冲层的进一步研究可以为高效和高速光电子设备开启新的可能性.

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