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Updated: Jan 11, 2026

The Effect of Interfacial Chemical Bonding in TiO2-SiO2 Composites on Their Photocatalytic NOx Abatement Performance
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The Effect of Interfacial Chemical Bonding in TiO2-SiO2 Composites on Their Photocatalytic NOx Abatement Performance

Published on: July 4, 2017

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TiO2/SnO2/g-C3N4II型异质连接:DFT设计,PEC合技术和降解机制与活性位点分析

Xing-Peng Wei1, Yu-Ting Yang1, Hong-Gang Ni1

  • 1School of Urban Planning and Design, Peking University Shenzhen Graduate School, Shenzhen, 518055, China.

Journal of environmental management
|November 15, 2025
PubMed
概括

这项研究引入了一个新的框架,通过将其与硫酸盐 (PMS) 或芬顿技术相结合来增强光电催化 (PEC) 净水处理. 新型TiO2/SnO2/g-C3N4材料通过改进的电子利用,显著提高了污染物清除效率.

关键词:
合技术 合技术DFT计算方法的计算方法电子利用率 电子利用率在PEC-PMS中使用PEC.在PEC-Self-Fenton中使用.

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相关概念视频

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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
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