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通过双层波导来克服SiN非线性光子中的应力限制

Karl J McNulty¹, Shriddha Chaitanya¹, Swarnava Sanyal²

¹Department of Electrical Engineering, Columbia University, New York, NY 10027, USA.

Nanophotonics (Berlin, Germany)

|November 17, 2025

概括

我们开发了一种新的化 (SiN) 双层波导,用于芯片上的非线性光子学. 这种方法克服了薄膜裂纹问题,使得像克尔频这样的高性能设备成为可能.

科学领域:

光子学是指光子学的使用方法.
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

化 (SiN) 是芯片上非线性光子学的一个有前途的材料,由于其低损耗和高非线性指数.
通过LPCVD的高厚SiN沉积会引起薄膜应力,导致裂并限制光子学中的可扩展性.

研究的目的:

为了克服非线性光子学高压LPCVDSiN的局限性.
为了实现高性能SiN基光子设备的可扩展制造.

主要方法:

提出了一个双层波导结构,将LPCVD SiN和低应力PECVD SiN结合起来.
研究的小组在1550 nm的速度分散调.
制造的低损耗共振器和证明的克尔频率.

主要成果:

在没有薄膜裂纹的情况下实现了组速度分散调整.
制造的共振器具有超过100万的内在质量因子.
演示了一个锁定,正常分散的克尔频率,在C频段跨越120nm,在芯片上有350μW的功率.

结论:

拟议的SiN双层波导方案有效地减轻了薄膜应力和裂纹问题.
这种方法使得高性能非线性光子设备的可扩展制造成为可能,包括宽带克尔频.

关键词:

电影中的压力是压力.频率子是一个频率子.不线性的非线性.化是一种化.

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P-N junction

P-N junction

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