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Bi₂O₂以Se为基础的单立体浮动门非挥发性存储器,具有增强的电荷保留和切换性能

Chi-Chun Cheng¹, Hsing-Chien Chien², Tai-Ting Lee^3,4

¹Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

|November 17, 2025

概括

研究人员使用Bi2O2Se.Se开发了一种新的单材料非挥发性存储器 (NVM). 这一突破整合了所有内存功能,克服了传统内存缩放和制造方面的挑战.

科学领域:

材料科学材料科学材料科学
固态电子固态电子
纳米技术纳米技术

背景情况:

传统的浮式门内存由于电荷泄漏和复杂结构而面临扩展限制.
现有的二维非挥发性存储器 (NVM) 设备通常需要多个材料层来实现不同的功能.

研究的目的:

使用单一的2D材料开发一个单一的NVM设备.
在一个材料系统中集成通道,电荷存储和道功能.
为了克服当前二维NVM的制造复杂性和可扩展性问题.

主要方法:

使用单一的2D材料Bi2O2Se,用于设备构造.
使用紫外线臭氧处理形成晶体氧化物外 (β-Bi2SeO5).
通过热化引入空缺,以创建用于存储电荷的金属核心 (m-BOS).

主要成果:

实现了一个单体NVM设备集成通道 (s-BOS),存储 (m-BOS) 和道 (BOS氧化物) 功能.
证明了大内存窗口,高存储密度 (~5 × 10^13 cm^-2),以及开/关比> 10^8.8.
呈现出快速编程/删除 (±12V,100毫秒),耐力 (>2000周期) 和保留 (>10^4秒) 的情况.

结论:

单一材料Bi2O2Se平台简化了制造,并提高了2DNVM设备的可扩展性.
这种方法为多层内存架构提供了一个有希望的替代方案.
设备性能指标符合高级内存应用程序的要求.

关键词:

这是一个2D内存.生物二氧化二二.低功率设备的使用情况.一个单一的非易失性存储器.过程简化流程简化

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