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Updated: Jan 6, 2026

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
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Published on: September 25, 2020

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在GaN HEMT上单立体集成的3D TFTs的演示,使用高断裂电压 (> 1900 V) 的cascode配置

Tian-Li Wu1,2, Hsin-Jou Ho3, Chia-Wei Liu3

  • 1Institue of Electronics and Department Electronics and Electrical Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan. tlwu@nycu.edu.tw.

Scientific reports
|November 17, 2025
PubMed
概括

研究人员在高电子流动性化 (GaN) 晶体管上实现了无形--氧化物 (a-IGZO) 薄膜晶体管的3D单体集成,达到超过1900V的断裂电压.

关键词:
3D单立体集成 3D单立体集成获得了HEMTs.薄膜晶体管 (TFT) 是一种

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