在六角化中用于量子发射器工程的现场控制的碳植入
Yun-Tao Wu1,2, Xu Guo1,2, Peng-Tao Jing1
1State Key Laboratory of Luminescence Science and Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, P. R. China.
ACS applied materials & interfaces
|November 18, 2025
概括
研究人员开发了一种新方法,精确定位2D六角化 (h-BN) 中的量子发射器. 该技术使用离子聚焦离子束 (FIB) 纳米图案和热处理来创建可控制的量子状态,用于量子技术.
科学领域:
- 量子技术是一种量子技术.
- 材料科学是一种材料科学.
- 纳米技术 纳米技术
背景情况:
- 在二维六角化 (h-BN) 中的位置控制量子缺陷对于量子技术至关重要.
- 之前的研究重点是碳化与缺陷相关的单光子发射器 (SPE),但缺乏精确的位置控制.
研究的目的:
- 开发一种用于制造h-BN的位置控制碳缺陷SPE的新方法.
- 为了使精确定位的SPE数组用于可扩展的量子应用程序.
主要方法:
- 一个两步制造过程,涉及离子 (He+) 聚焦离子束 (FIB) 纳米图案.
- 在FIB后,在甲大气中进行高温回火以吸收碳,然后在空气中进行回火以提高SPE质量.
主要成果:
- 使用He+ FIB.实现了30nm以下的空间分辨率来创建缺陷.
- 制造的碳缺陷SPE具有高亮度 (高达每秒6.7 × 10^6).
- 证明了增强的单光子纯度,g2(0) < 0.2.2.
结论:
- 在h-BN.中建立了一个可扩展生产精确定位的SPE阵列的基础方法.
- 铺平了将这些SPE集成到用于量子信息处理和传感的基于的光子平台的道路.
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