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在加植入后,高度定向的 pyrolytic 石墨化学结合结构在加植入后

T A O Jafer¹, H A A Abdelbagi², A Sulyok³

¹Physics Department, University of Pretoria, Hatfield, Pretoria, South Africa.

Scientific reports

|November 18, 2025

概括

离子植入高度定向的烧解石墨 (HOPG) 导致结构变化,更高的离子能量导致无形化. 这项研究发现,HOPG需要每原子的位移量 (dpa) 比以前认为的要高得多,以实现完全无形化.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
固态物理固态物理

背景情况:

高度定向的烧解石墨 (HOPG) 是研究石墨材料的模型系统.
了解离子植入对HOPG的影响对于电子和涂料应用至关重要.
之前的研究表明,HOPG无形化的每原子位移 (dpa) 值较低.

研究的目的:

为了研究 (Ga) 离子植入引起的HOPG的结构变化.
确定离子能量和流动对缺陷形成和无形化的影响.
为了将实验结果与HOPG无形化的理论dpa计算进行比较.

主要方法:

离子在各种能量 (10-30 keV) 和流量 (2x10^15到5x10^16 Ga+/cm^2) 的情况下植入HOPG.
拉曼光谱法用于分析结构变化,包括缺陷形成和无形化.
每个原子的位移 (dpa) 值是使用SRIM (Stopping and Range of Ions in Matter) 软件计算的.

主要成果:

在高流量诱导的缺陷下低能量的 (10 keV) 植入,由拉曼D和G峰值的变化证明.
在相同的流量下植入更高的能量 (30 keV) 导致了完全的无形化,由合并的D和G峰值表示.
对HOPG无形化的实验dpa值明显超过了之前报告的值 (≥35dpa与0.2-3dpa相比).

结论:

离子能量是HOPG的无形化过程中的关键因素.
对于HOPG的完全无偿化而言,dpa的门远远高于以前所确定的.
需要进一步的研究来准确量化HOPG无形化所需的dpa.

关键词:

形态化无形化是什么植入的植入方式是.霍普斯:霍普斯是一个好人.拉曼光谱法拉曼光谱法

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