具有低全球变暖潜力的C2H2F4/CF4O对SiNx作为CHF3替代品的蚀刻的影响
Kyung Lim Kim1,2, Jong Woo Hong3, Young Woo Jeon4
1Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Scientific reports
|November 18, 2025
概括
像C2H2F4和CF4O这样的新型环保气体显著改善了用于半导体制造的化 (SiNx) 蚀刻. 与传统的CHF3.3相比,这些替代品提供更高的蚀刻率和选择性,同时减少温室气体排放.
科学领域:
- 半导体制造业 半导体制造业
- 材料科学 材料科学 材料科学
- 环境化学环境化学
背景情况:
- 半导体制造中的双重图案工艺需要化 (SiNx) 蚀刻,其蚀刻速率高,并且比二氧化 (SiOx) 有选择性.
- 传统的蚀刻气体,如CHF3/CF4,具有包括低选择性和高全球变暖潜力 (GWP) 的局限性.
研究的目的:
- 研究CHF3的替代气体,用于二重模式的SiNx蚀刻.
- 评估C2H2F4和CF4O对蚀刻特性和环境足迹的影响.
主要方法:
- 使用C2H2F4和C2H2F4 + CF4O混合物的SiNx蚀刻的实验研究.
- 对蚀刻速率,蚀刻选择性,沟,临界维度 (CD) 变化和聚合物形成的分析.
- 温室气体排放的测量 (MMTCE) 与CHF进行比较3.
主要成果:
- C2H2F4提高了蚀刻速率和选择性,但导致了沟和CD增加.
- 将CF4O添加到C2H2F4中进一步提高了蚀刻速度和选择性,消除了沟.
- 与CHF3.3相比,替代气体表明温室气体排放明显减少.
结论:
- C2H2F4 + CF4O为SiNx蚀刻提供了一个卓越的环保替代品,平衡性能和环境影响.
- 这些先进的蚀刻工艺适用于下一代半导体设备,如FinFET和3D NAND.
- 该研究强调了半导体行业可持续蚀刻解决方案的发展.
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