石墨烯特征与由此产生的准范德瓦尔斯 Zn3P2的功能之间的联系
Thomas Hagger1, Helena Rabelo Freitas2, Chiara Mastropasqua3
1Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland anna.fontcuberta-morral@epfl.ch.
概括
石墨烯基底能够使太阳能电池的化 (Zn3P2) 薄膜无应变生长. 在SiC上的H-CVD石墨烯上实现了最高质量的膜,克服了以前的局限性.
科学领域:
- 材料科学 材料科学 材料科学
- 薄膜技术技术 薄膜技术
- 可再生能源是可再生能源的来源.
背景情况:
- 化 (Zn3P2) 是一个有前途的太阳能电池材料,由于地球上丰富的元素.
- 挑战包括n型兴奋剂,格子不匹配和高热膨胀,导致缺陷.
- 石墨烯通过弱范德瓦尔斯相互作用为无应变生长提供了一个解决方案.
研究的目的:
- 为了比较5个石墨烯基底的准范德瓦尔斯表轴 (q-vdWe) 增长Zn3P2.
- 研究石墨烯表面特征和生长参数对薄膜质量的影响.
- 评估q-vdWe在Zn3P2薄膜太阳能电池应用中的潜力.
主要方法:
- 聚晶Zn3P2薄膜通过分子束表 (MBE) 生长.
- 使用了五种不同的石墨烯基底.
- 描述包括光发光,冷阴极发光和横截面传输电子显微镜 (XTEM).
主要成果:
- 石墨烯表面特征 (步骤,纹) 作为核化场所.
- 最优质的Zn3P2薄膜在6H-SiC (Si面) 上在H-CVD石墨烯上生长的大粒.
- 观测到与谷物边界应变场 (±3%) 相关的子频段间隙排放.
结论:
- 准-范德瓦尔斯表皮氧是Zn3P2薄膜生长的可行方法.
- 石墨烯基底的选择显著影响Zn3P2膜质量和颗粒大小.
- 优化生长参数和基质选择对于高性能Zn3P2太阳能电池至关重要.
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