超宽带差半导体的异质集成用于无线电频率功率器件
Hong Zhou1, Min Zhou1, Mingjie Xiang1
1State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics and Guangzhou Institute of Technology, Xidian University, Xi'an 710071, China.
Science advances
|November 19, 2025
概括
研究人员开发了一种将氧化 (Ga2O3) 与化 (AlN) 基板集成的新方法,以提高射频 (rf) 设备的性能. 这一突破为下一代电子提供了更好的电子封闭和更高的功率密度.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 超宽带隙 (UWBG) 半导体对于高性能无线电频率 (rf) 设备至关重要,因为它们具有高临界电场和和速度.
- 整合具有优异导热性的UWBG材料仍然是一个重大挑战,阻碍了设备的性能和可靠性.
研究的目的:
- 开发一种可扩展的方法,在高热导率 (kT) 化 (AlN) 基板上集成浅剂氧化 (Ga2O3) 薄膜.
- 为了克服传统方法 (如离子植入和界面介电层) 的局限性.
主要方法:
- 展示了一个可扩展的,基于脱皮的层转移过程,用于将Ga2O3薄膜异质整合到AlN基板上.
- 利用Ga2O3和AlN的固有特性,在没有额外层的情况下实现浅层兴奋剂和高导热率.
主要成果:
- 在Ga2O3/AlN接口实现了大导电带偏移 (3.4 eV),增强了Ga2O3通道中的电子限制.
- 制造的T-gate rf功率晶体管,其最大振荡频率为90 GHz.
- 证明了高输出功率密度 (4.6 W/mm在2 GHz,4.1 W/mm在6 GHz) 和最小的噪声值 (0.48 dB在8 GHz).
结论:
- 开发的Ga2O3/AlN异构平台显示了下一代rf应用的重大前景.
- 基于脱皮的整合方法为实现高性能UWBG设备提供了可扩展和有效的方法.
- 实现的设备性能指标是UWBG rf功率晶体管中报告最好的之一.
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