通过原子层蚀刻和沉积来改善基于的超导量子的寿命
Neha Mahuli1, Joaquin Minguzzi1, Jiansong Gao1
1AWS Center for Quantum Computing, Pasadena, California 91106, United States.
ACS nano
|November 20, 2025
概括
我们开发了一种使用原子层蚀刻和沉积 (ALE和ALD) 的超导量子设备的新型表面处理方法. 这一过程显著降低了介电损失,并提高了量子比特的性能,改善了质量因素和放松时间.
科学领域:
- 量子计算是一种量子计算.
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
背景情况:
- 超导量子器件遭受介电损失,限制性能.
- 在上的薄膜易受表面损伤和氧化物形成.
- 两级系统 (TLS) 的吸收是介电损失的主要原因.
研究的目的:
- 将ALE和ALD结合使用干燥表面处理来减轻介电损失.
- 为了提高超导量子设备的性能,特别是基于的共振器和超声量子比特.
- 调查表面处理对设备性能影响的持久性.
主要方法:
- 作为最后的制造步骤,使用了结合原子层蚀刻 (ALE) 和原子层沉积 (ALD) 的干燥表面处理.
- ALE用于去除原生金属氧化物和制造残留物.
- 使用ALD可以在现场用薄薄的介电层封装暴露的金属表面.
主要成果:
- 在接受治疗的设备中,观察到与TLS吸收相关的损失减少了2倍.
- 经过处理的跨子量子比特获得的质量因子 (Q) 中位数为3.69 ± 0.42 × 10^6,能量放松时间 (T1) 为196 ± 22μs.
- 绩效的改善持续了几个月.
结论:
- 结合ALE和ALD处理有效地扭转了制造引起的表面损伤.
- 这种表面处理显著而持久地改善了超导量子设备的性能.
- 降低电容元件的TLS缺陷密度是提高设备性能的关键.
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