应变介导电压控制磁性异构和磁化逆转在比斯穆特替代的伊特铁子膜和半结构中
Walid Al Misba1, Miela J Gross2,3, Kensuke Hayashi3,4
1Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia 23220, United States.
ACS applied materials & interfaces
|November 21, 2025
概括
电压诱导的应变调节了比斯替代的伊铁花 (Bi-YIG) 薄膜中的磁性异构性. 这种对磁态的电压控制显示了对节能非挥发性内存和神经形态计算应用的前景.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 石替代的伊特铁石 (Bi-YIG) 具有较低的强制性和高的磁阻力.
- 磁弹性效应可以通过应变调节磁性质.
- 铁磁/铁电异构结构是磁电器件的关键.
研究的目的:
- 为了研究Bi-YIG薄膜中磁性异性质的电压诱导应变调制.
- 探索Bi-YIG异构结构在节能电子设备中的潜力.
- 为了展示磁域切换的电压控制.
主要方法:
- 在PMN-PT基板上制造Bi-YIG薄膜和有图案结构.
- 在异构结构中应用电压以诱导应变.
- 在现场磁光克尔效应 (MOKE) 显微镜观察磁性异性变化.
- 在Bi-YIG点和赛道上磁化逆转的电压控制的表征.
主要成果:
- 在应用于电压时观察到磁性异构的显著调制.
- 证明了磁化轻轴在值电压以上的90°切换.
- 实现了1.05 × 10−7 s m−1 的磁电系数,与类似的系统具有竞争力.
- 在有图案的Bi-YIG结构中对磁化反转场的电压控制.
结论:
- 在PMN-PT基板上的Bi-YIG薄膜允许进行电压控制的磁性异性质调制.
- 观察到的磁电效应是显著的,可与其他最先进的材料相比较.
- 这些发现突显了Bi-YIG异构结构在先进的记忆和神经形态计算应用中的潜力.
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