在抗铁磁体 CoNb3S6中,应变调节的异常大厅高原
Long Chen1, Richard Lai1, Shashi Pandey1
1Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States.
Nano letters
|November 23, 2025
概括
研究人员在CoNb3S6中发现了一个可以调节的异常霍尔高原,CoNb3S6是一种分层的反铁磁体. 这一发现使新的四态霍尔切换能够用于自旋电子应用.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 显示异常霍尔效应的抗铁磁体是理解磁性,拓学和电子结构的关键.
- 开发具有大型和可调节的异常霍尔效应的反铁磁铁对于推进自旋电子设备至关重要.
研究的目的:
- 为了研究在分层反铁磁体CoNb3S6.6.S中应变调节的异常霍尔效应.
- 探索观察到的异常霍尔高原背后的机制及其对新型切换应用的潜力.
主要方法:
- 对CoNb3S6.6.的实验性表征
- 在不同温度和应力下测量霍尔歇斯底里斯循环.
- 对称性分析以了解底层的相位过渡.
主要成果:
- 在CoNb3S6.6.中观察到一种应变调节的异常霍尔高原.
- 高原的高度可以通过温度和应变来调整,这表明隐藏的相位过渡.
- 这种过渡改变了磁性异构性,而不改变磁性秩序,保持了ab平面旋转对称性.
结论:
- 异常的霍尔高原是由隐藏过渡期间相位共存引起的.
- 这种现象使非挥发性异常霍尔电阻和一种新的四态霍尔切换机制成为可能.
- CoNb3S6为下一代自旋电子应用提供了一个有前途的材料.
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