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Updated: Jan 10, 2026

The Synthesis, Characterization and Reactivity of a Series of Ruthenium N-triphosPh Complexes

The Synthesis, Characterization and Reactivity of a Series of Ruthenium N-triphosPh Complexes

Published on: April 10, 2015

基于小而简单的分子结构的热稳定鲁前体,在推进鲁ALD过程中进行缩放式互连金属化

Hideaki Nakatsubo^1,2, Debananda Mohapatra¹, Eun-Soo Lee^3,4

¹Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

|November 24, 2025

概括

一种新的 (Ru) 前体使得高温原子层沉积 (ALD) 成为先进的相互连接. 这种Ru ALD工艺产生了密集的低电阻薄膜,具有出色的基板选择性,对于下一代电子产品至关重要.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
化学工程是化学工程的重要组成部分.

背景情况:

铜互连面临着先进半导体技术的局限性.
通过原子层沉积 (ALD) 的 (Ru) 是相互连接的有希望的替代方案.
开发合适的Ru前体对于实现高性能ALD-Ru工艺至关重要.

研究的目的:

为ALD.引入一种新的小分子前体[Ru(trimethylenemethane (TMM)) ((p-cymene) ],用于ALD.
使用这种前体,研究高温ALD-Ru工艺特征.
评估薄膜特性,基板选择性和先进互连应用的潜在机制.

主要方法:

高温原子层沉积 (ALD) 使用新型的[Ru(TMM) ((p-cymene) ]前体.
薄膜生长,纯度和电阻的表征 (例如,使用四点探头).
对TiN和SiO2.2的基质选择性研究.
计算分析 (例如吸附行为,碎片能量) 和先进的晶体学 (例如电子反射散射衍射).

主要成果:

在高温下在TiN上实现了每周期高增长 (≈1.28 Å/周期) 和短化 (≈8 个周期).
沉积的Ru薄膜表现出较低的杂质含量和电阻率,低至10.6μΩcm,没有后.
显示出出色的基质选择性,即使在1000个循环后,也没有在SiO2上观察到Ru核化.
计算和晶体分析阐明了前体的热稳定性,选择性吸附和谷物生长机制,这些机制有助于低电阻.

结论:

这种新型的[Ru(TMM) ((p-cymene) ]前体使得一个强大的,高温的ALD-Ru过程成为可能.
该过程产生了高质量的Ru薄膜,其特性适用于先进的互连.
这种Ru前体是下一代半导体制造中可扩展和耐用的ALD-Ru工艺的强有力的候选者.

关键词:

卢的原子层沉积 (ALD-Ru)先进的互联互连连接.大量类似的电阻率.每个周期的高增长率 (GPC)高热稳定性高热稳定性这本小说是Ru的前身,是Ru的前身.选择性的选择性

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