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扰乱散射诱导大室温半导体中的非线性异常霍尔效应 CdGeAs₂

Seng Huat Lee^1,2, Takumi Iwaya³, Kosuke Nakayama³

¹2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA.

Advanced materials (Deerfield Beach, Fla.)

|November 24, 2025

概括

研究人员在室温3D CdGeAs2晶体中发现了显著的非线性霍尔效应 (NLHE). 这一突破为先进的电子频率混合技术提供了更高的响应能力.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
固态电子固态电子

背景情况:

非线性霍尔效应 (NLHE) 是凝聚物质物理学中具有潜在应用的重要现象.
之前对NLHE的研究主要集中在2D材料上,在操作温度和响应能力方面面临限制 (通常为<10−4 m/V).
在3D系统中,在室温下实现高响应性,特别是对于散射诱导的NLHE,一直是一个持续的挑战.

研究的目的:

发现和描述3D散体单晶中散射诱导的NLHE障碍.
研究NLHE在3D材料中的潜力,以实现实际应用,特别是在室温下.
探索NLHE在3D系统中的频率混合能力.

主要方法:

试验合成和表征合金类型的CdGeAs₂散装单晶.
测量非线性霍尔效应的特性,包括响应度和异常的霍尔角度.
使用角度分辨率光辐射光谱学 (ARPES) 和密度功能理论 (DFT) 计算进行带结构分析.
对称性分析和非线性霍尔导电性缩放以确定主导的NLHE机制.

主要成果:

在CdGeAs₂批量单晶中发现分散诱导的NLHE障碍,其室温反应率高达10^-3 m/V.
演示AC驱动的第二和整顿霍尔响应,以及一个大的异常霍尔角度.
通过综合分析,确定扰乱散射是CdGeAs中NLHE的主要驱动机制.
宽带电子频率混合能力在室温MHz范围的展览.

结论:

障碍散射是一种可行的机制,可以在室温下在3D材料中实现显著的NLHE.
对于下一代电子设备来说,CdGeAs₂表现出有前途的特性.
这项工作为将3D材料中的散射诱导NLHE整合到高频混合技术铺平了道路.

关键词:

在CdGeAs2As2中使用.频率混合频率的混合.非线性大厅效应是一种非线性大厅效应.一个半导体半导体.

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