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Updated: Jan 10, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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波段对齐和半金属Bi4Se3/Si异构结构的高性能无偏向Vis-NIR光检测

Junye Li1, Peng Zhao1, Zhaowu Mi1

  • 1School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.

Nano letters
|November 24, 2025
PubMed
概括

基板上的半金属丝化物 (Bi4Se3) 薄膜能够在可见到近红外波长范围内进行高效,公正的光检测. 这种异构结构在先进的电子和光电子应用中显示出有前途的性能.

关键词:
带的对齐方式 带对齐方式在Bi4Se3/Si异构结构中.半金属接触接触方式没有偏见的Vis−NIR光检测.

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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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