通过铁氧化物接口应变工程,提高化螺旋磁铁中的电磁阻力
Nivarthana W Y A Y Mudiyanselage1, Derick DeTellem1, Yasinthara M Wadumesthri1
1Department of Physics, University of South Florida, Tampa, Florida 33620, USA. nivarthanawa@usf.edu.
Nanoscale
|November 24, 2025
概括
使用氧化铁的接口工程增强了化 (MnP) 磁膜中的磁阻力 (MR). 来自Fe3O4层的压力可将MR提升高达37%,对于旋转电子设备来说是有前途的.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
背景情况:
- 高磁性材料具有复杂的自旋结构,为先进的磁还原器件提供了潜力.
- 接口工程是优化磁性质和增强磁阻 (MR) 效应的关键.
研究的目的:
- 为了研究使用氧化铁 (Fe3O4) 接口在化 (MnP) 薄膜中对MR的应变诱导作用.
- 探讨Fe3O4层厚度如何影响接口合和MRI在铁磁转向黑磁 (FM-HM) 过渡附近.
主要方法:
- 制造纳米结构的MnP薄膜通过分子束在Si基板上的表达.
- 沉积不同厚度的Fe3O4层 (7nm和58nm),形成双层.
- 在FM-HM过渡附近的磁性特性和MR效应的表征.
主要成果:
- 7nm Fe3O4 层增强了接口合和磁化;58nm 层主导了磁反应.
- 7nm Fe3O4 层的 MR 增加了 20%,而 58nm Fe3O4 层的 MR 增加了 37%.
- 观察到的MR增强归因于Fe3O4/MnP接口的应变诱导的自旋依赖散射.
结论:
- 铁氧化物/海马磁体接口的应变调节显著影响MR.
- 使用Fe3O4的接口工程提供了一个可行的策略来增强MnP膜中的MR.
- 这些发现突显了开发下一代自旋电子应用的潜力.
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