区域选择性低压热原子层沉积化的化
Bernhard Y van der Wel1, Kees van der Zouw1, Antonius A I Aarnink1
1MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede 7500 AE, The Netherlands.
ACS omega
|November 24, 2025
概括
这项研究证明了选择性化 (GaN) 薄膜沉积,使用可兼容温度的热原子层沉积. 这种方法可以在有图案的化 (AlN) 基板上实现精确的GaN生长.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体制造业 半导体制造业
- 纳米技术纳米技术
背景情况:
- 面积选择性沉积对于先进的半导体制造至关重要.
- 原子层沉积 (ALD) 可以精确控制薄膜生长.
- 化 (GaN) 是高功率电子产品的关键材料.
研究的目的:
- 为了实现GaN薄膜的内在面积选择性沉积.
- 在后端线 (BEOL) 兼容温度下进行沉积.
- 开发一种在有图案的基板上选择性增长GaN的方法.
主要方法:
- 热原子层沉积 (ALD) 使用三甲基和氨 (NH3) 的连续脉冲.
- 基质制备涉及在热二氧化 (SiO2) 上纹理的化 (AlN).
- 描述技术包括传输电子显微镜 (TEM),光谱圆测量和原子力显微镜 (AFM).
主要成果:
- 成功地实现了多晶GaN薄膜的内在面积选择性沉积.
- 沉积发生在673K的AlN层上.
- 预沉积AlN的ALD使得在有模式的AlN上选择性GaN生长.
结论:
- 在符合BEOL的温度下,内在区域选择性GaN沉积是可行的.
- 开发的方法为选择性GaN生长在有图案的基板上提供了一条途径.
- 这种技术有可能制造下一代基于GaN的设备.
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