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Updated: Jan 10, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Published on: May 28, 2016

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在MOCVD WS2中,激子消灭和捕获之间的缺陷工程竞争.

Ruofei Zheng1, Leon Daniel2, Dedi Sutarma2

  • 1Department of Chemistry, University of Waterloo Waterloo Ontario N2L 3G1 Canada gsciaini@uwaterloo.ca.

Chemical science
|November 24, 2025
PubMed
概括

在WS2单层中存在硫空缺,会导致缺陷捕获,但在高刺激时,激子-激子灭绝占主导地位. 了解这种竞争对于光电子设备的性能至关重要.

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