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Updated: Jan 10, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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通过双门设计来实现晶体管级激活功能:从模拟西格和高斯控制到实时硬件演示

Junhyung Cho1, Youngmin Han2, Won Woo Lee1

  • 1Department of Artificial Intelligence Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seoul, 04763, Republic of Korea.

Advanced materials (Deerfield Beach, Fla.)
|November 24, 2025
PubMed
概括

新的晶体管使节能的人工智能 (AI) 硬件可调节的模拟激活功能. 这些设备精确地控制了西格和高斯函数,提高了AI模型的准确性并降低了功耗.

关键词:
斯激活函数的高斯激活函数这是一个反双极晶体管.硬件应用程序 硬件应用程序多层感知器多层感知器预测变化的变化.屏幕门结构 屏幕门结构西格莫伊德激活功能的功能

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