垂直自纠正的memristive数组用于页面智能并行逻辑和算术处理
Kunhee Son1, Jea Min Cho1, Dong Hoon Shin1
1Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea.
Advanced materials (Deerfield Beach, Fla.)
|November 25, 2025
概括
这项研究介绍了一种新的逻辑内存 (LIM) 架构,使用memristors在内存中进行高效的计算. 开发的系统通过在数据上直接执行算术运算来展示可扩展,节能的内存计算.
科学领域:
- 计算机科学 计算机科学
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
背景情况:
- 传统的·诺伊曼架构面临数据传输瓶.
- 基于memristor的内存逻辑 (LIM) 系统通过将计算集成到内存数组中提供了一个有前途的解决方案.
- 非挥发性切换和密集集成能力使得memristors适合LIM.
研究的目的:
- 使用3D垂直电阻随机存储器 (VRRAM) 阵列实现一个页面智能的LIM架构.
- 在内存数组中完全执行布尔函数和算术运算.
- 展示一个可扩展和节能的内存计算解决方案.
主要方法:
- 使用了一个由自我纠正的Pt-Ta2O5-Al:HfO2-TiN记忆元组成的3D VRRAM阵列.
- 两个逻辑原始,即1M和2M逻辑,用于页面内和页面间的操作.
- 一个记忆算术逻辑单元 (mALU) 为算术函数设计和实现.
主要成果:
- 核心布尔函数完全通过电阻状态转换在内存数组中执行.
- 一个2位的完整的加法器被实施,最小的足迹是三个单元格,并在12个步骤中完成.
- 实验展示了页面内和页面间的操作,以及具有高可重复性的完整的mALU功能.
结论:
- 拟议的页面智能LIM架构显著降低了空间时间成本.
- 这种架构对可扩展和节能内存计算具有前景.
- 基于memristor的LIM系统是克服·诺伊曼瓶的一个可行的方法.
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