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Updated: Jan 10, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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强大的和局部控制10旋转量子比特阵列在

Valentin John1, Cécile X Yu2, Barnaby van Straaten2

  • 1QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands. V.John@tudelft.nl.

Nature communications
|November 26, 2025
PubMed
概括

研究人员为洞实现了高保真量子门,展示了统一的量子位属性,并减少了10旋转量子位数组中的交叉声. 这项工作推进了可扩展的量子计算,并改进了控制机制.

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