对GaN-on-Si伪垂直MOSFETs的电气特性和模拟与频率依赖门C-V调查
Valentin Ackermann1,2, Mohammed El Amrani1,3, Blend Mohamad1
1Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France.
Micromachines
|November 27, 2025
概括
这项关于化在 (GaN-on-Si) 伪垂直 MOSFET 的研究揭示了在沟底的微挖沟会导致门电压变化. 这一发现对于优化正常关闭设备的性能至关重要.
科学领域:
- 材料科学与工程 材料科学与工程
- 半导体设备物理 半导体设备物理
- 电力电子 电力电子 电力电子
背景情况:
- 化在 (GaN-on-Si) 伪垂直金属氧化物半导体场效应晶体管 (MOSFETs) 对下一代电力电子有希望.
- 优化设备性能,特别是正常关闭操作和切换特性,仍然是一个关键的挑战.
- 了解缺陷机制和接口属性对于GaN-on-Si设备制造至关重要.
研究的目的:
- 为了全面研究单沟和多沟的GaN-on-Si伪垂直MOSFET.
- 分析门到源电容电压 (C-V) 特性的频率依赖性.
- 阐明接口电荷和缺陷对设备性能的影响,并确定门电压转移的根本原因.
主要方法:
- 使用 Al2O3/TiN MOS 堆的第一门工艺制造 GaN-on-Si 伪垂直 MOSFET.
- 实验性表征包括晶体管行为分析和门到源C-V测量.
- 技术 计算机辅助设计 (TCAD) Sentaurus Synopsys模拟研究接口电荷效应和频率依赖性.
主要成果:
- 已制造的设备表现出正常的OFF操作,低门泄漏率和良好的切换性能.
- 提取了低有效通道移动性,并研究了C-V特征的频率依赖性.
- 模拟显示,p-GaN/介电接口上的正定电荷和捐赠型缺陷会影响设备的行为.
- 提出了一种机制,将值电压转移与尖的沟底微沟沟连接起来.
- 观察到的高频 C-V 凸起可能由 p-GaN 区域的电荷捕获或反转解释.
结论:
- 沟底部的尖微沟被确定为GaN-on-Si伪垂直MOSFET中值电压转移的主要机制.
- 该研究提供了关于高频C-V凸起的起源的见解,将其归因于接口电荷动态.
- 这些发现对于改进可靠的GaN-on-Si动力装置的设计和制造至关重要.
相关概念视频
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