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Updated: Jan 10, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Published on: November 24, 2016

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局部电场定制,以平衡AlGaN/GaN HEMT的电压可靠性,电流密度和高频性能

Yuxin Wang1,2, Jiangwen Wang1,2, Zilong Dong1,2

  • 1Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China.

Micromachines
|November 27, 2025
PubMed
概括

研究人员开发了一种新的非均复合门介电器,用于化/化高电子移动性晶体管 (AlGaN/GaN HEMT). 这种方法可以提高高频性能,而不会显著损害故障电压,有利于先进的应用.

关键词:
AlGaN/GaN HEMT AlGaN/GaN HEMT HEMT 在线播放 在线播放断裂电压的故障电压是什么切断频率的切断频率是什么不统一的复合门介电器 不统一的复合门介电器技术 计算机辅助设计 计算机辅助设计

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